P. Moens, M. Uren, A. Banerjee, M. Meneghini, B. Padmanabhan, W. Jeon, S. Karboyan, M. Kuball, G. Meneghesso, E. Zanoni, M. Tack
{"title":"AlGaN/GaN功率器件中的负动态Ron","authors":"P. Moens, M. Uren, A. Banerjee, M. Meneghini, B. Padmanabhan, W. Jeon, S. Karboyan, M. Kuball, G. Meneghesso, E. Zanoni, M. Tack","doi":"10.23919/ISPSD.2017.7988902","DOIUrl":null,"url":null,"abstract":"Through optimization of the GaN buffer structure, 650V rated AlGaN/GaN power devices with negative dynamic Ron are obtained. By judicious tuning of the resistivity of the [C]-doped and unintentionally-doped (UID) layers (i.e. the charge transport properties in these layers), positive rather than the deleterious negative charged trapping can be achieved. Long term reliability testing shows that the positive charge can be retained for days.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Negative dynamic Ron in AlGaN/GaN power devices\",\"authors\":\"P. Moens, M. Uren, A. Banerjee, M. Meneghini, B. Padmanabhan, W. Jeon, S. Karboyan, M. Kuball, G. Meneghesso, E. Zanoni, M. Tack\",\"doi\":\"10.23919/ISPSD.2017.7988902\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Through optimization of the GaN buffer structure, 650V rated AlGaN/GaN power devices with negative dynamic Ron are obtained. By judicious tuning of the resistivity of the [C]-doped and unintentionally-doped (UID) layers (i.e. the charge transport properties in these layers), positive rather than the deleterious negative charged trapping can be achieved. Long term reliability testing shows that the positive charge can be retained for days.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988902\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988902","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Through optimization of the GaN buffer structure, 650V rated AlGaN/GaN power devices with negative dynamic Ron are obtained. By judicious tuning of the resistivity of the [C]-doped and unintentionally-doped (UID) layers (i.e. the charge transport properties in these layers), positive rather than the deleterious negative charged trapping can be achieved. Long term reliability testing shows that the positive charge can be retained for days.
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