ICP蚀刻室中偏置脉冲占空比等离子体的研究

2011 Abstracts IEEE International Conference on Plasma Science Pub Date : 2011-06-26 DOI:10.1109/PLASMA.2011.5993306

T. Jo, M. Yun, BuII Jeon, GwangSup Cho, G. Kwon, Jang-Hoon Choi, Dong-Jin Kim, Chang-Kil Nam

{"title":"ICP蚀刻室中偏置脉冲占空比等离子体的研究","authors":"T. Jo, M. Yun, BuII Jeon, GwangSup Cho, G. Kwon, Jang-Hoon Choi, Dong-Jin Kim, Chang-Kil Nam","doi":"10.1109/PLASMA.2011.5993306","DOIUrl":null,"url":null,"abstract":"It has been very interested pulsed bias etching system because of it's low electron temperature and good plasma uniformity. Low electron temperature can enhance etch selectivity and it is very crucial for oxide etching. In the pulse operation system, we must increase bias power to apply same power with respect to CW operation.","PeriodicalId":221247,"journal":{"name":"2011 Abstracts IEEE International Conference on Plasma Science","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of plasma in bias pluse duty ratio at ICP etch chamber\",\"authors\":\"T. Jo, M. Yun, BuII Jeon, GwangSup Cho, G. Kwon, Jang-Hoon Choi, Dong-Jin Kim, Chang-Kil Nam\",\"doi\":\"10.1109/PLASMA.2011.5993306\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It has been very interested pulsed bias etching system because of it's low electron temperature and good plasma uniformity. Low electron temperature can enhance etch selectivity and it is very crucial for oxide etching. In the pulse operation system, we must increase bias power to apply same power with respect to CW operation.\",\"PeriodicalId\":221247,\"journal\":{\"name\":\"2011 Abstracts IEEE International Conference on Plasma Science\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Abstracts IEEE International Conference on Plasma Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PLASMA.2011.5993306\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Abstracts IEEE International Conference on Plasma Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PLASMA.2011.5993306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

脉冲偏压刻蚀系统具有电子温度低、等离子体均匀性好等优点，一直受到人们的关注。较低的电子温度可以提高蚀刻选择性，对氧化物蚀刻至关重要。在脉冲操作系统中，必须增加偏置功率才能使连续波操作产生相同的功率。

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Study of plasma in bias pluse duty ratio at ICP etch chamber

It has been very interested pulsed bias etching system because of it's low electron temperature and good plasma uniformity. Low electron temperature can enhance etch selectivity and it is very crucial for oxide etching. In the pulse operation system, we must increase bias power to apply same power with respect to CW operation.

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2011 Abstracts IEEE International Conference on Plasma Science

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