Bi2SiO5/β-Bi2O3异质结的界面特征和电子结构

Atomic and Molecular Pulsed Lasers Pub Date : 2021-12-02 DOI:10.1117/12.2614020

E. A. Kovaleva, O. Vodyankina, V. Svetlichny

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引用次数: 2

摘要

用密度泛函理论描述了Bi2SiO5/β-Bi2O3异质结的原子和电子结构。界面为窄隙半导体，具有间接带隙。讨论了杂化结构中费米能级附近的态重分布和自旋轨道耦合的影响。

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Interface features and electronic structure of Bi2SiO5/β-Bi2O3 hetero-junction

Atomic and electronic structure of Bi2SiO5/β-Bi2O3 hetero-junction was described by means of density functional theory. The interface was found to be narrow-gap semiconductor with indirect band gap. The redistribution of states near the Fermi level in hybrid structure and the impact of spin-orbit coupling are discussed.

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Atomic and Molecular Pulsed Lasers

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