M. Camiade, D. Bouw, G. Mouginot, F. Auvray, P. Alleaume, D. Floriot, L. Favede, J. Thorpe, H. Stieglauer
{"title":"高度集成的S和c波段内部匹配的准mmic功率GaN器件","authors":"M. Camiade, D. Bouw, G. Mouginot, F. Auvray, P. Alleaume, D. Floriot, L. Favede, J. Thorpe, H. Stieglauer","doi":"10.23919/EUMC.2012.6459249","DOIUrl":null,"url":null,"abstract":"This paper presents recent results on highly integrated internally-matched Gallium Nitride transistors in S and C-band. The concept and the advantages of “Quasi MMIC” devices are described, showing the high potentialities for performance improvements and cost reductions. Using Gallium Arsenide based passive MMICs for input and/or output matching, more than 50W has been obtained at S-band with more than 55% PAE from 2.9GHz to 3.5GHz and more than 45% PAE at C-band @ 6.2GHz.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"170 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Highly integrated S and C-band internally-matched Quasi-MMIC power GaN devices\",\"authors\":\"M. Camiade, D. Bouw, G. Mouginot, F. Auvray, P. Alleaume, D. Floriot, L. Favede, J. Thorpe, H. Stieglauer\",\"doi\":\"10.23919/EUMC.2012.6459249\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents recent results on highly integrated internally-matched Gallium Nitride transistors in S and C-band. The concept and the advantages of “Quasi MMIC” devices are described, showing the high potentialities for performance improvements and cost reductions. Using Gallium Arsenide based passive MMICs for input and/or output matching, more than 50W has been obtained at S-band with more than 55% PAE from 2.9GHz to 3.5GHz and more than 45% PAE at C-band @ 6.2GHz.\",\"PeriodicalId\":243164,\"journal\":{\"name\":\"2012 7th European Microwave Integrated Circuit Conference\",\"volume\":\"170 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 7th European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMC.2012.6459249\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMC.2012.6459249","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly integrated S and C-band internally-matched Quasi-MMIC power GaN devices
This paper presents recent results on highly integrated internally-matched Gallium Nitride transistors in S and C-band. The concept and the advantages of “Quasi MMIC” devices are described, showing the high potentialities for performance improvements and cost reductions. Using Gallium Arsenide based passive MMICs for input and/or output matching, more than 50W has been obtained at S-band with more than 55% PAE from 2.9GHz to 3.5GHz and more than 45% PAE at C-band @ 6.2GHz.
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