环栅MOSFET的亚阈值电流建模:高斯方法

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI:10.1109/ELECTRO.2009.5441170

P. Roy, B. Syamal, N. Mohankumar, C. Sarkar

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引用次数: 4

摘要

我们开发了一种分析亚阈值漏极电流模型以及亚阈值摆幅用于周围栅极(SG MOSFET) MOSFET。该模型是直接使用高斯定律而不是像以前那样使用泊松方程推导出来的。通过与不同沟道长度、沟道厚度和氧化物厚度的三维数值结果对比，验证了电流和摆幅模型的正确性，与数值模拟结果吻合较好。

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Subthreshold current modeling of surrounding gate MOSFET: A gaussian approach

We have developed an analytical subthreshold drain current model along with subthreshold swing for surrounding gate (SG MOSFET) MOSFETs. The model is derived from direct use of the Gaussian law rather than using Poisson equation as has been implemented earlier. The models for current and swing have been verified by comparison with 3-D numerical results for different channel lengths, channel thickness and oxide thickness: a very good agreement with the numerical simulations has been observed.

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来源期刊

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems

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