{"title":"互补双极晶体管的基本数字方案","authors":"N. Alimova, Z. Aripova, Sh. T. Toshmatov","doi":"10.1109/ICAICT.2010.5612004","DOIUrl":null,"url":null,"abstract":"A way to use the injection-voltaic mode of the bipolar transistor in order to create electronic switching cells (electronics keys), which are the basis of digital electronic elements, with power supply voltage of order of the contact potential difference is investigated.","PeriodicalId":314036,"journal":{"name":"2010 4th International Conference on Application of Information and Communication Technologies","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Base digital schemes on complementary bipolar transistors\",\"authors\":\"N. Alimova, Z. Aripova, Sh. T. Toshmatov\",\"doi\":\"10.1109/ICAICT.2010.5612004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A way to use the injection-voltaic mode of the bipolar transistor in order to create electronic switching cells (electronics keys), which are the basis of digital electronic elements, with power supply voltage of order of the contact potential difference is investigated.\",\"PeriodicalId\":314036,\"journal\":{\"name\":\"2010 4th International Conference on Application of Information and Communication Technologies\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 4th International Conference on Application of Information and Communication Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICAICT.2010.5612004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 4th International Conference on Application of Information and Communication Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAICT.2010.5612004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Base digital schemes on complementary bipolar transistors
A way to use the injection-voltaic mode of the bipolar transistor in order to create electronic switching cells (electronics keys), which are the basis of digital electronic elements, with power supply voltage of order of the contact potential difference is investigated.