用于深亚微米MOSFET匹配特性的鲁棒且具有生产价值的可寻址阵列架构

S.B. Yeo, J. Bordelon, S. Chu, M.F. Li, B. Tranchina, M. Harward, L. Chan, A. See
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引用次数: 7

摘要

提出了一种鲁棒的可寻址阵列测试结构,可以自动表征MOSFET的匹配,具有高面积和时间效率,精度和可重复性。它具有CMOS开关,以确保完整的测试操作范围,并防止个别dut的栅氧化击穿破坏整个测试结构的功能。测试结构提供了卓越的隔离,以最大限度地减少串扰,同时在测试中提供更大的灵活性。给出了在0.18 /spl mu/m工艺硅片上的测试结果(Id失配)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A robust and production worthy addressable array architecture for deep sub-micron MOSFET's matching characterization
A robust addressable array test structure is presented, which allows automated characterization of the MOSFET's matching, with high area and time efficiency, accuracy and repeatability. It features CMOS switches to ensure a full test operation range, and prevent gate oxide breakdown of individual DUTs from destroying the functionality of the whole test structure. The test structure provides superior isolation to minimize cross talk while providing greater flexibility in testing. The testing result (Id mismatch) on wafers of 0.18 /spl mu/m technology is presented.
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