一种新的模拟电路复用设计方法,用于CMOS技术的迁移

Tao Yang, Mingkun Gao, Suntao Wu, Donghui Guo
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引用次数: 9

摘要

本文提出了一种技术迁移过程中模拟设计复用的新方法。以往的研究忽略了工艺参数的变化。因此,基于gm/id方法和ACM模型,我们的方法采用了额外的预提取步骤来确定参数。这使得MOS晶体管工作状态的实际描述,因此更精确地决定两种典型策略的设计自由度。验证了该方法,并将结果与0.6um至0.35um的共源放大器技术进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new reuse method of analog circuit design for CMOS technology migration
In this paper, a new method for analog design reuse during technology migration is proposed. Previous works ignore the variance of technology parameters. Accordingly, bases on gm/id methodology and ACM model, our methodology adopts an extra pre-extraction step for parameters deciding. This enables a practical description of MOS transistor working state and is therefore more precisely in deciding the design freedoms of two typical strategies. The methodology is validated and results are compared with a common-source amplifier from 0.6um to 0.35um technology.
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