锗成分对薄层Si1−yGey雪崩光电二极管频率响应的影响

K. Majumder, N. Das
{"title":"锗成分对薄层Si1−yGey雪崩光电二极管频率响应的影响","authors":"K. Majumder, N. Das","doi":"10.1109/ICMAP.2013.6733538","DOIUrl":null,"url":null,"abstract":"Bandwidth calculation of Si1-yGey n+-i-p+ avalanche photodiode (APD) is described for multiplication layer down to tens of nanometers considering dead-space effect. In the analysis, the depletion region is discretized into equal energy segments to take into account the discontinuous nature of impact ionization in the multiplication layer due to dead-space effect, and carrier diffusion from undepleted regions is considered to study the effect of low bias on the frequency response. Carrier distribution within the structure is obtained by numerical solution of coupled equations and recurrence relations. The computed results are used to investigate the effect of Ge-composition (y) on the bandwidth of a Si1-yGey APD having thin multiplication layer. Results show that at high gain region, for a fixed applied bias, frequency response decreases with the increase in Ge-content. It is also seen that at moderate gain region, if the bandwidth is RC dominated then the bandwidth decreases with increase in Ge-content.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of Ge-composition on the frequency response of a thin layer Si1−yGey avalanche photodiode\",\"authors\":\"K. Majumder, N. Das\",\"doi\":\"10.1109/ICMAP.2013.6733538\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Bandwidth calculation of Si1-yGey n+-i-p+ avalanche photodiode (APD) is described for multiplication layer down to tens of nanometers considering dead-space effect. In the analysis, the depletion region is discretized into equal energy segments to take into account the discontinuous nature of impact ionization in the multiplication layer due to dead-space effect, and carrier diffusion from undepleted regions is considered to study the effect of low bias on the frequency response. Carrier distribution within the structure is obtained by numerical solution of coupled equations and recurrence relations. The computed results are used to investigate the effect of Ge-composition (y) on the bandwidth of a Si1-yGey APD having thin multiplication layer. Results show that at high gain region, for a fixed applied bias, frequency response decreases with the increase in Ge-content. It is also seen that at moderate gain region, if the bandwidth is RC dominated then the bandwidth decreases with increase in Ge-content.\",\"PeriodicalId\":286435,\"journal\":{\"name\":\"2013 International Conference on Microwave and Photonics (ICMAP)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Microwave and Photonics (ICMAP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMAP.2013.6733538\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Microwave and Photonics (ICMAP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMAP.2013.6733538","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文描述了考虑死区效应的几十纳米倍增层下si1 - ygeyn +-i-p+雪崩光电二极管(APD)的带宽计算。在分析中,考虑到死空间效应导致倍增层中碰撞电离的不连续特性,将耗尽区离散为等能量段,考虑未耗尽区载流子扩散,研究低偏置对频率响应的影响。通过对耦合方程和递推关系的数值求解,得到了结构内载流子的分布。利用计算结果研究了锗成分(y)对具有薄倍增层的Si1-yGey APD带宽的影响。结果表明,在高增益区域,当施加偏置固定时,频率响应随ge含量的增加而减小。在中等增益区域,如果带宽以RC为主,则带宽随着ge含量的增加而减小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Ge-composition on the frequency response of a thin layer Si1−yGey avalanche photodiode
Bandwidth calculation of Si1-yGey n+-i-p+ avalanche photodiode (APD) is described for multiplication layer down to tens of nanometers considering dead-space effect. In the analysis, the depletion region is discretized into equal energy segments to take into account the discontinuous nature of impact ionization in the multiplication layer due to dead-space effect, and carrier diffusion from undepleted regions is considered to study the effect of low bias on the frequency response. Carrier distribution within the structure is obtained by numerical solution of coupled equations and recurrence relations. The computed results are used to investigate the effect of Ge-composition (y) on the bandwidth of a Si1-yGey APD having thin multiplication layer. Results show that at high gain region, for a fixed applied bias, frequency response decreases with the increase in Ge-content. It is also seen that at moderate gain region, if the bandwidth is RC dominated then the bandwidth decreases with increase in Ge-content.
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