BSIM3 MOSFET模型精度的射频电路仿真

Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194) Pub Date : 1998-08-09 DOI:10.1109/RAWCON.1998.709209

S. Tin, A. Osman, K. Mayaram, C. Hu

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引用次数: 5

摘要

在0.5 /spl mu/m CMOS工艺中，研究了BSIM3 MOSFET模型用于小信号射频电路仿真的精度。对不同偏置条件和信道长度下的小信号y和s参数的比较表明，BSIM3非常适合于100 kHz至10 GHz范围内的小信号分析。

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BSIM3 MOSFET model accuracy for RF circuit simulation

The accuracy of the BSIM3 MOSFET model for small-signal RF circuit simulation has been investigated for a 0.5 /spl mu/m CMOS process. Comparisons of the small signal y and s parameters for different bias conditions and channel lengths show that BSIM3 is reasonably well suited for small-signal analyses from 100 kHz up to 10 GHz.

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Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194)

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