基于缺陷测试的CMOS标准电池特性

W. Pleskacz, D. Kasprowicz, Tomasz Oleszczak, W. Kuzmicz
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引用次数: 31

摘要

本文扩展了CMOS标准电池的缺陷检测方法。所提出的方法允许找到在实际集成电路中可能发生的故障类型,确定其概率,并找到检测这些故障的输入测试向量。对于输入端的短路,使用两种类型的单元模拟条件-“有线与”和“有线或”。工业标准细胞表征的例子表明,单一的逻辑故障概率表是不够的。需要在输入处为“有线与”和“有线或”条件单独的表,以进行完整的表征和分层测试生成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS standard cells characterization for defect based testing
This paper extends the CMOS standard cells characterization methodology for defect based testing. The proposed methodology allows to find the types of faults which may occur in a real IC, to determine their probabilities, and to find the input test vectors which detect these faults. For shorts at the inputs two types of cell simulation conditions - "Wired-AND" and "Wired-OR" are used. Examples of industrial standard cells characterization indicate that a single logic fault probability table is not sufficient. Separate tables for " Wired-AND " and " Wired-OR" conditions at the inputs are needed for full characterization and hierarchical test generation.
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