{"title":"一种测量片上交叉耦合电容的新型测试结构","authors":"A. Bogliolo, F. Vaira, L. Vendrame, L. Bortesi","doi":"10.1109/SPI.2004.1409041","DOIUrl":null,"url":null,"abstract":"We present a new test structure for measuring on-chip cross-coupling capacitance by means of crosstalk-induced supply currents. The key advantage of the proposed approach over existing charge-based capacitance measurements (CBCMs) based on cross talk is that the victim line is kept at a constant voltage level, thus avoiding short-circuit currents and enabling complete compensation of charge redistribution effects. We present preliminary experimental results obtained from a 0.13 /spl mu/m CMOS implementation.","PeriodicalId":119776,"journal":{"name":"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2004-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A new test structure for measuring on-chip cross-coupling capacitances\",\"authors\":\"A. Bogliolo, F. Vaira, L. Vendrame, L. Bortesi\",\"doi\":\"10.1109/SPI.2004.1409041\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a new test structure for measuring on-chip cross-coupling capacitance by means of crosstalk-induced supply currents. The key advantage of the proposed approach over existing charge-based capacitance measurements (CBCMs) based on cross talk is that the victim line is kept at a constant voltage level, thus avoiding short-circuit currents and enabling complete compensation of charge redistribution effects. We present preliminary experimental results obtained from a 0.13 /spl mu/m CMOS implementation.\",\"PeriodicalId\":119776,\"journal\":{\"name\":\"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SPI.2004.1409041\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPI.2004.1409041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new test structure for measuring on-chip cross-coupling capacitances
We present a new test structure for measuring on-chip cross-coupling capacitance by means of crosstalk-induced supply currents. The key advantage of the proposed approach over existing charge-based capacitance measurements (CBCMs) based on cross talk is that the victim line is kept at a constant voltage level, thus avoiding short-circuit currents and enabling complete compensation of charge redistribution effects. We present preliminary experimental results obtained from a 0.13 /spl mu/m CMOS implementation.