一种测量片上交叉耦合电容的新型测试结构

A. Bogliolo, F. Vaira, L. Vendrame, L. Bortesi
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引用次数: 3

摘要

提出了一种利用串扰诱发电源电流测量片上交叉耦合电容的新型测试结构。与现有基于串扰的基于电荷的电容测量(CBCMs)相比,该方法的关键优势在于受害线保持在恒定电压水平,从而避免了短路电流,并能够完全补偿电荷再分配效应。我们给出了一个0.13 /spl mu/m CMOS实现的初步实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new test structure for measuring on-chip cross-coupling capacitances
We present a new test structure for measuring on-chip cross-coupling capacitance by means of crosstalk-induced supply currents. The key advantage of the proposed approach over existing charge-based capacitance measurements (CBCMs) based on cross talk is that the victim line is kept at a constant voltage level, thus avoiding short-circuit currents and enabling complete compensation of charge redistribution effects. We present preliminary experimental results obtained from a 0.13 /spl mu/m CMOS implementation.
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