有机金属卤化物钙钛矿/二硅化钡薄膜双结太阳能电池

R. Vismara, O. Isabella, M. Zeman
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引用次数: 20

摘要

二硅化钡(BaSi2)是一种储量丰富且价格低廉的半导体材料,具有良好的光电性能。在这项工作中,我们证明了2 μm厚的基于basi2的薄膜太阳能电池可以显示出等于41.1 mA/cm2的隐含光电流密度,这高于最先进的基于晶圆的c-Si异质结太阳能电池。这种性能使BaSi2成为高性能薄膜和多结太阳能电池的有吸引力的吸收剂。特别是,为了评估双硅化钡的潜力,我们提出了一种基于有机金属卤化物钙钛矿(CH3NH3PbI3)作为顶部吸收剂和BaSi2作为底部吸收剂的薄膜双结太阳能电池。所得到的超薄双结CH3NH3PbI3 / BaSi2 (< 2 μm)的隐含总光电流密度为38.65 mA/cm2(上电池19.84 mA/cm2,下电池18.81 mA/cm2),转换效率高达28%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Organometallic halide perovskite/barium di-silicide thin-film double-junction solar cells
Barium di-silicide (BaSi2) is an abundant and inexpensive semiconductor with appealing opto-electrical properties. In this work we show that a 2-μm thick BaSi2-based thin-film solar cell can exhibit an implied photo-current density equal to 41.1 mA/cm2, which is higher than that of a state-of-the-art wafer-based c-Si hetero-junction solar cell. This performance makes BaSi2 an attractive absorber for high-performing thin-film and multi-junction solar cells. In particular, to assess the potential of barium di-silicide, we propose a thin-film double-junction solar cell based on organometallic halide perovskite (CH3NH3PbI3) as top absorber and BaSi2 as bottom absorber. The resulting modelled ultra-thin double-junction CH3NH3PbI3 / BaSi2 (< 2 μm) exhibits an implied total photo-current density equal to 38.65 mA/cm2 (19.84 mA/cm2 top cell, 18.81 mA/cm2 bottom cell) and conversion efficiencies up to 28%.
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