F. Arnaud, P. Ferreira, F. Piazza, A. Gandolfo, P. Zuliani, P. Mattavelli, E. Gomiero, G. Samanni, J. Jasse, C. Jahan, J. Reynard, R. Berthelon, O. Weber, A. Villaret, B. Dumont, J. Grenier, R. Ranica, C. Gallon, C. Boccaccio, A. Souhaite, L. Desvoivres, D. Ristoiu, L. Favennec, V. Caubet, S. DelMedico, N. Cherault, R. Beneyton, S. Chouteau, P. Sassoulas, L. Clément, P. Boivin, D. Turgis, F. Disegni, J. Ogier, X. Federspiel, O. Kermarrec, M. Molgg, A. Viscuso, R. Annunziata, A. Maurelli, P. Cappelletti, E. Ciantar
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引用次数: 13
摘要
在本文中，我们提出了我们的28nm FDSOI-PCM解决方案的增强，使用双极结晶体管(BJT)选择器与三栅氧化物器件方案(逻辑/1,8 v /5V)共集成，用于先进的汽车微控制器设计。利用FDSOI衬底，开发了创新的Super-STI (SSTI)方案，可实现0,019um2 PCM电池。据我们所知，这是迄今为止报道的密度最大的eNVM细胞。由于采用了新颖的栅极堆栈和间隔器架构，汽车的终极模拟性能目标已成功演示，而不会影响5V晶体管的可靠性。在16MB PCM阵列上实现了汽车0级可靠性标准，包括3倍的焊接回流热应力(265°C/210s)。最后，在165°C下，即使在250K的写入操作后，也显示出宽的读取窗口。
High Density Embedded PCM Cell in 28nm FDSOI Technology for Automotive Micro-Controller Applications
in this paper we present an enhancement of our 28nm FDSOI-PCM solution using Bipolar Junction Transistor (BJT) selector co-integrated with triple gate oxide devices scheme (logic/1,8V/5V) for advanced automotive microcontroller designs. Leveraging FDSOI substrate, innovative Super-STI (SSTI) scheme has been developed enabling 0,019um2 PCM cell. It is the densest eNVM cell reported so far, based on our knowledge. Ultimate analog performance targets for automotive have been successfully demonstrated without compromising reliability for 5V transistor thanks to a novel gate stack & spacers architecture. Automotive grade-0 reliability criteria have been achieved on 16MB PCM array, including 3x aggressive runs of soldering reflow thermal stress (265°C/210s). Finally, wide reading window has been shown even after 250K writing operation at 165°C.
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