Au-TiBx-n-GaN-i-Al2O3肖特基势垒二极管电流流动机理研究

2007 17th International Crimean Conference - Microwave & Telecommunication Technology Pub Date : 2007-10-29 DOI:10.1109/CRMICO.2007.4368847

A. Belyaev, N. S. Boltovets, V. N. Ivanov, R. Konakova, Y. Kudryk, V. V. Milenin, Y. Sveshnikov

{"title":"Au-TiBx-n-GaN-i-Al2O3肖特基势垒二极管电流流动机理研究","authors":"A. Belyaev, N. S. Boltovets, V. N. Ivanov, R. Konakova, Y. Kudryk, V. V. Milenin, Y. Sveshnikov","doi":"10.1109/CRMICO.2007.4368847","DOIUrl":null,"url":null,"abstract":"We investigated a current flow mechanism in the Au-TiBx-n-GaN-i-AI2O3 Schottky barrier diodes, in which space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences of l-V curves of forward-biased Schottky barriers showed that, in the 80-380 K temperature range, current flow occurs as tunneling along dislocations crossing the space-charge region. The dislocation density p estimated from l-V curves (in accordance with the model of tunneling along the dislocation line) was ap 1.7 times 10-7 cm-2.","PeriodicalId":380403,"journal":{"name":"2007 17th International Crimean Conference - Microwave & Telecommunication Technology","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On the Current Flow Mechanism in Au-TiBx-n-GaN-i-Al2O3 Schottky Barrier Diodes\",\"authors\":\"A. Belyaev, N. S. Boltovets, V. N. Ivanov, R. Konakova, Y. Kudryk, V. V. Milenin, Y. Sveshnikov\",\"doi\":\"10.1109/CRMICO.2007.4368847\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated a current flow mechanism in the Au-TiBx-n-GaN-i-AI2O3 Schottky barrier diodes, in which space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences of l-V curves of forward-biased Schottky barriers showed that, in the 80-380 K temperature range, current flow occurs as tunneling along dislocations crossing the space-charge region. The dislocation density p estimated from l-V curves (in accordance with the model of tunneling along the dislocation line) was ap 1.7 times 10-7 cm-2.\",\"PeriodicalId\":380403,\"journal\":{\"name\":\"2007 17th International Crimean Conference - Microwave & Telecommunication Technology\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 17th International Crimean Conference - Microwave & Telecommunication Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2007.4368847\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 17th International Crimean Conference - Microwave & Telecommunication Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2007.4368847","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们研究了Au-TiBx-n-GaN-i-AI2O3肖特基势垒二极管中的电流流动机制，其中空间电荷区域宽度远远超过GaN中的德布罗意波长。对正偏肖特基势垒的l-V曲线的温度依赖性分析表明，在80 ~ 380 K温度范围内，电流沿位错穿越空间电荷区发生隧穿。根据l-V曲线(沿位错线开挖模型)估计的位错密度p为ap 1.7 × 10-7 cm-2。

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On the Current Flow Mechanism in Au-TiBx-n-GaN-i-Al2O3 Schottky Barrier Diodes

We investigated a current flow mechanism in the Au-TiBx-n-GaN-i-AI2O3 Schottky barrier diodes, in which space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences of l-V curves of forward-biased Schottky barriers showed that, in the 80-380 K temperature range, current flow occurs as tunneling along dislocations crossing the space-charge region. The dislocation density p estimated from l-V curves (in accordance with the model of tunneling along the dislocation line) was ap 1.7 times 10-7 cm-2.

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2007 17th International Crimean Conference - Microwave & Telecommunication Technology

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