Ga2O3 MESFET厚度变化的理论研究:损耗到增强模式转变

2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON) Pub Date : 2023-02-24 DOI:10.1109/DELCON57910.2023.10127322

Anshul Rawtani, Aishwarya Tomar, Rahul Kumar

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引用次数: 0

摘要

研究了ga2o3基金属半导体场效应晶体管(MESFET)的直流特性。不同的通道厚度，即1000 nm, 500 nm, 250 nm和100 nm进行了模拟。通过减小通道厚度，耗尽模式(d模式)器件转变为增强模式(e模式)器件。在阈下区域观察到特殊的指数输出特性。

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Theoretical Investigation of Thickness Variation on Ga2O3 MESFET: Depletion to Enhancement Mode Transition

We have investigated the DC characteristics of Ga2O3-based metal semiconductor field effect transistor (MESFET). Different channel thicknesses namely 1000 nm, 500 nm, 250 nm and 100 nm have been employed for simulation. By reducing the channel thickness, depletion mode (D-mode) devices turned into enhancement mode (E-mode) devices. Peculiar exponential output characteristics have been observed in the subthreshold region.

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2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON)

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