GaAs(001)阶梯状结构的表征

International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2012-07-02 DOI:10.1109/EDM.2012.6310193

I. O. Akhundov, A. Kozhukhov, V. Alperovich

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引用次数: 0

摘要

通过二维自相关函数和表面起伏的傅里叶变换以及单原子台阶的全长来描述晶体表面阶梯状形态的形成。该方法用于表征GaAs(001)“外延ready”衬底在接近表面与镓和砷蒸气平衡的条件下的热平滑动力学。

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Characterization of GaAs(001) step-terraced morphology formation

Step-terraced morphology formation of a crystal surface is described by means of two-dimensional autocorrelation functions and Fourier transforms of the surface relief and by the full length of monatomic steps. This approach is applied for characterization of thermal smoothing kinetics of GaAs(001) “epi-ready” substrates in the conditions close to equilibrium between the surface and gallium and arsenic vapors.

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International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices

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