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引用次数: 5
摘要
利用优化的栅极驱动器可以实现高频变换器中SiC mosfet的快速开关。IXYS IXDD614高速栅极驱动器可提供14A的源源和汇聚峰值电流，栅极电压上升和下降时间小于30ns，驱动6个并联的1.2kV 36A SiC mosfet。本文设计了一种可靠、高效的栅极驱动器，并对其进行了评估和实验验证，以提供足够的栅极电流，实现最小导通电阻、快速开关操作、良好的抗噪性、宽占空比和开关频率，而不会产生明显的自热。此外，还研究了不同频率下栅极电阻对栅极驱动器性能的影响。利用ANSYS Q3D萃取器对铜线的寄生电感值进行了分析。所设计的无自举电容栅极驱动器可以驱动6个并联的1.2kV 36A SiC mosfet h桥变换器模块的顶部或底部开关。
Design and evaluation of a high-current gate driver circuit for six paralleled 1.2kV 36A SiC MOSFETs
Fast switching of SiC MOSFETs in high frequency converters can be realized with an optimized gate driver. IXYS IXDD614 high-speed gate drivers can be used to deliver a source and sink peak current of 14A with gate voltage rise and fall times of less than 30ns to drive six paralleled 1.2kV 36A SiC MOSFETs. In this paper, a reliable and efficient gate driver is designed, evaluated, and experimentally validated to provide sufficient gate current for minimum on-resistance, fast switching operation, good noise immunity, and wide range of duty cycles and switching frequencies without significant self-heating. Also, the effect of the gate resistance on the gate driver performance is examined for different frequencies. The parasitic inductance values of the copper traces are analyzed using ANSYS Q3D Extractor. The designed gate driver without bootstrap capacitance can drive either the top or bottom switches of the six paralleled 1.2kV 36A SiC MOSFETs H-bridge converter module.
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