N. Wang, Hao Wu, J. Liu, Jianhua Lu, H. Hsieh, Po-Yi Wu, C. Jou, Mau-Chung Frank Chang
{"title":"基于二维无源gm增强的60dB增益和4dB噪声的CMOS v波段接收机","authors":"N. Wang, Hao Wu, J. Liu, Jianhua Lu, H. Hsieh, Po-Yi Wu, C. Jou, Mau-Chung Frank Chang","doi":"10.1109/RFIC.2011.5940603","DOIUrl":null,"url":null,"abstract":"A direct conversion receiver which consists of low noise amplifier (LNA), mixer and programmable gain amplifier (PGA) for V-band (60GHz) applications is designed and realized in 65nm CMOS. A novel two-dimensional passive gm-enhancement technique is devised to boost the conversion gain and lower the Noise Figure (NF) with insignificant power overhead. An overall minimum SSB NF of 3.9dB and a maximum power conversion gain of 60dB have been validated from such fabricated receiver that occupies core silicon area of 0.2mm2 and draws 34mA from 1V supply.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 60dB gain and 4dB noise figure CMOS V-band receiver based on two-dimensional passive Gm-enhancement\",\"authors\":\"N. Wang, Hao Wu, J. Liu, Jianhua Lu, H. Hsieh, Po-Yi Wu, C. Jou, Mau-Chung Frank Chang\",\"doi\":\"10.1109/RFIC.2011.5940603\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A direct conversion receiver which consists of low noise amplifier (LNA), mixer and programmable gain amplifier (PGA) for V-band (60GHz) applications is designed and realized in 65nm CMOS. A novel two-dimensional passive gm-enhancement technique is devised to boost the conversion gain and lower the Noise Figure (NF) with insignificant power overhead. An overall minimum SSB NF of 3.9dB and a maximum power conversion gain of 60dB have been validated from such fabricated receiver that occupies core silicon area of 0.2mm2 and draws 34mA from 1V supply.\",\"PeriodicalId\":448165,\"journal\":{\"name\":\"2011 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2011.5940603\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2011.5940603","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 60dB gain and 4dB noise figure CMOS V-band receiver based on two-dimensional passive Gm-enhancement
A direct conversion receiver which consists of low noise amplifier (LNA), mixer and programmable gain amplifier (PGA) for V-band (60GHz) applications is designed and realized in 65nm CMOS. A novel two-dimensional passive gm-enhancement technique is devised to boost the conversion gain and lower the Noise Figure (NF) with insignificant power overhead. An overall minimum SSB NF of 3.9dB and a maximum power conversion gain of 60dB have been validated from such fabricated receiver that occupies core silicon area of 0.2mm2 and draws 34mA from 1V supply.
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