S. Garcia Blanco, A. Glidle, Arthur James Cooper, Richard M. De La Rue, A. Jacqueline, B. Poumellec, J. Aitchison
{"title":"电子束辐照制备集成光电路中掺锗二氧化硅致致密化的表征","authors":"S. Garcia Blanco, A. Glidle, Arthur James Cooper, Richard M. De La Rue, A. Jacqueline, B. Poumellec, J. Aitchison","doi":"10.1109/FOPC.2002.1015799","DOIUrl":null,"url":null,"abstract":"Electron-beam irradiation of germanium-doped silica allows the fabrication of integrated optical circuits and offers several advantages over traditional fabrication methods based on photolithography and reactive ion etching. The increment of refractive index after electron-beam irradiation is mainly due to compaction of the irradiated material. In this paper, we present results on the densification behaviour as a function of different parameters such as size of patterns written, Ge-concentration and dose, the understanding of which is needed for the design of integrated optical circuits with the required properties.","PeriodicalId":117784,"journal":{"name":"Proceedings of 2002 IEEE/LEOS Workshop on Fibre and Optical Passive Components (Cat.No.02EX595)","volume":"131 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of the densification induced by electron-beam irradiation of ge-doped silica for the fabrication of integrated optical circuits\",\"authors\":\"S. Garcia Blanco, A. Glidle, Arthur James Cooper, Richard M. De La Rue, A. Jacqueline, B. Poumellec, J. Aitchison\",\"doi\":\"10.1109/FOPC.2002.1015799\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electron-beam irradiation of germanium-doped silica allows the fabrication of integrated optical circuits and offers several advantages over traditional fabrication methods based on photolithography and reactive ion etching. The increment of refractive index after electron-beam irradiation is mainly due to compaction of the irradiated material. In this paper, we present results on the densification behaviour as a function of different parameters such as size of patterns written, Ge-concentration and dose, the understanding of which is needed for the design of integrated optical circuits with the required properties.\",\"PeriodicalId\":117784,\"journal\":{\"name\":\"Proceedings of 2002 IEEE/LEOS Workshop on Fibre and Optical Passive Components (Cat.No.02EX595)\",\"volume\":\"131 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 2002 IEEE/LEOS Workshop on Fibre and Optical Passive Components (Cat.No.02EX595)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FOPC.2002.1015799\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2002 IEEE/LEOS Workshop on Fibre and Optical Passive Components (Cat.No.02EX595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FOPC.2002.1015799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of the densification induced by electron-beam irradiation of ge-doped silica for the fabrication of integrated optical circuits
Electron-beam irradiation of germanium-doped silica allows the fabrication of integrated optical circuits and offers several advantages over traditional fabrication methods based on photolithography and reactive ion etching. The increment of refractive index after electron-beam irradiation is mainly due to compaction of the irradiated material. In this paper, we present results on the densification behaviour as a function of different parameters such as size of patterns written, Ge-concentration and dose, the understanding of which is needed for the design of integrated optical circuits with the required properties.