射频MEMS封装的性能评估

L. Hwang, Li Li, J. Drye, S. Kuo
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引用次数: 6

摘要

采用MEMS(微机电系统)技术制造的射频开关显示出下一代低功耗、高数据速率射频无线系统所急需的具有吸引力的电气特性。为了提供环保,同时保持MEMS开关的电气性能,必须仔细设计RF封装。例如,对于射频封装来说,保持低插入损耗、低回波损耗和MEMS开关端口之间的高隔离是很重要的。本文介绍了一种用于分析封装开关电气性能的方法。给出了两种京瓷陶瓷封装的仿真结果。采用Ansoft HFSS全波模拟器获得封装和线键互连特性,并结合实测或仿真器件特性。结果与一般系统规格进行了比较。在模拟中创建了与实际包中使用的相似的线键轮廓。在仿真中还实现了包体的三维接地系统。利用TRL机载校准和直接SOLT封装探针完成了实验验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance evaluation of RF MEMS packages
An RF switch made using MEMS (Micro Electro-Mechanical System) technology shows attractive electrical characteristics that are critically needed in the next generation low power consumption, high data rate RF wireless systems. In order to provide environmental protection and at the same time preserve electrical performance of the MEMS switch, an RF package must be carefully designed. For example, it is important for the RF package to maintain low insertion loss, low return loss, and high isolation between ports of the MEMS switches. In this paper, a methodology used to analyze: the electrical performance of packaged switches is described. Simulation results of two Kyocera ceramic packages are shown. Ansoft HFSS fullwave simulator was used to obtain the package and wire bond interconnect characteristics, and combined with either measured or simulated device characteristics. The results were compared with general system specifications. Wire bond profiles, which resemble those actually were used in the packages, were created in the simulation. The three-dimensional grounding system of the packages was also implemented in the simulation. Experimental validation using TRL on-board calibration and direct SOLT package probing were also completed.
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