InP基器件的原位快速等温处理(RIP)

International Conference on Indium Phosphide and Related Materials Pub Date : 1990-04-23 DOI:10.1109/ICIPRM.1990.203018

R. Singh, R. Thakur, A. Katz, A. Nelson, J. Narayan

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引用次数: 0

摘要

介绍了利用原位快速等温处理器对InP进行原位快速等温化学清洗、II-A型氟化物的固相外延生长和InP电容器的原位金属化。本研究使用的InP衬底为未掺杂的n型

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In-situ rapid isothermal processing (RIP) of InP based devices

The use of an in-situ rapid isothermal processor for the in-situ rapid isothermal chemical cleaning of InP, solid phase epitaxial growth of II-A fluorides, and in-situ metallization of InP capacitors is described. InP substrates used in this work were undoped n-type

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International Conference on Indium Phosphide and Related Materials

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