脉冲电源用高压晶闸管开关

E. Spahn, G. Buderer, E. Ramezani
{"title":"脉冲电源用高压晶闸管开关","authors":"E. Spahn, G. Buderer, E. Ramezani","doi":"10.1109/MODSYM.1994.597051","DOIUrl":null,"url":null,"abstract":"Investigations were made to replace spark gaps by thyristors as main switches for electromagnetic launching applications. Experiments with different kinds of thyristors showed that reverse blocking thyristors with optimized turn-on capability are ideal candidates for pulse power applications. They have an interdigitated gate structure, which enables a high current rate (> 700 A/ps), and a sufficient current capability (Imax = 90 kA). Since the blocking voltage of the used device is limited to 3.0 kV several thyristors have to be put in series to apply the switch at the operating voltage of 10 kV. In order to avoid a serial configuration of thyristors a 11 kV-thyristor device has been developed, by stacking thyristor chips one upon the other and surrounding the whole stack by a common housing. This device has the same current and current rate capability as an ordinary serial configuration of thyristors, whereas the volume and the inductance are strongly reduced. Due to its compactness and a newly developed gate unit with a high current rate and a dispersion less than 50 ns there is no requirement to protect the newly developed device by a snubber circuit (saturable reactors, freewheel diode, etc.). The compact thyristor stack was applied as main switch to a 50 kJ-capacitor. Together with a diode crowbar switch, also based on multichip technology, and an inductance, a pulse forming unit for electromagnetic launching applications has been built and tested successfully.","PeriodicalId":330796,"journal":{"name":"Twenty-First International Power Modulator Symposium, Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"High Voltage Thyristor Switch For Pulse Power Applications\",\"authors\":\"E. Spahn, G. Buderer, E. Ramezani\",\"doi\":\"10.1109/MODSYM.1994.597051\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Investigations were made to replace spark gaps by thyristors as main switches for electromagnetic launching applications. Experiments with different kinds of thyristors showed that reverse blocking thyristors with optimized turn-on capability are ideal candidates for pulse power applications. They have an interdigitated gate structure, which enables a high current rate (> 700 A/ps), and a sufficient current capability (Imax = 90 kA). Since the blocking voltage of the used device is limited to 3.0 kV several thyristors have to be put in series to apply the switch at the operating voltage of 10 kV. In order to avoid a serial configuration of thyristors a 11 kV-thyristor device has been developed, by stacking thyristor chips one upon the other and surrounding the whole stack by a common housing. This device has the same current and current rate capability as an ordinary serial configuration of thyristors, whereas the volume and the inductance are strongly reduced. Due to its compactness and a newly developed gate unit with a high current rate and a dispersion less than 50 ns there is no requirement to protect the newly developed device by a snubber circuit (saturable reactors, freewheel diode, etc.). The compact thyristor stack was applied as main switch to a 50 kJ-capacitor. Together with a diode crowbar switch, also based on multichip technology, and an inductance, a pulse forming unit for electromagnetic launching applications has been built and tested successfully.\",\"PeriodicalId\":330796,\"journal\":{\"name\":\"Twenty-First International Power Modulator Symposium, Conference\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Twenty-First International Power Modulator Symposium, Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MODSYM.1994.597051\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Twenty-First International Power Modulator Symposium, Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MODSYM.1994.597051","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

摘要

研究了用晶闸管代替火花隙作为电磁发射应用的主开关。用不同类型晶闸管进行的实验表明,具有优化导通性能的反向阻断晶闸管是脉冲功率应用的理想选择。它们具有交错栅极结构,可实现高电流速率(> 700 a /ps)和足够的电流能力(Imax = 90 kA)。由于所用器件的阻断电压限制在3.0 kV,因此必须将几个晶闸管串联起来,以使开关的工作电压为10 kV。为了避免晶闸管的串行配置,已经开发了一种11 kv晶闸管器件,通过将晶闸管芯片一个一个地堆叠在另一个上,并用一个共同的外壳包围整个堆栈。该器件具有与普通晶闸管串联配置相同的电流和电流速率能力,而体积和电感却大大减小。由于其结构紧凑,并且新开发的栅极单元具有高电流速率和小于50 ns的色散,因此不需要使用缓冲电路(可饱和电抗器,飞轮二极管等)来保护新开发的设备。紧凑的晶闸管堆作为主开关应用于50kj电容器。与同样基于多芯片技术的二极管撬棍开关和电感一起,构建了用于电磁发射应用的脉冲形成单元并成功进行了测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High Voltage Thyristor Switch For Pulse Power Applications
Investigations were made to replace spark gaps by thyristors as main switches for electromagnetic launching applications. Experiments with different kinds of thyristors showed that reverse blocking thyristors with optimized turn-on capability are ideal candidates for pulse power applications. They have an interdigitated gate structure, which enables a high current rate (> 700 A/ps), and a sufficient current capability (Imax = 90 kA). Since the blocking voltage of the used device is limited to 3.0 kV several thyristors have to be put in series to apply the switch at the operating voltage of 10 kV. In order to avoid a serial configuration of thyristors a 11 kV-thyristor device has been developed, by stacking thyristor chips one upon the other and surrounding the whole stack by a common housing. This device has the same current and current rate capability as an ordinary serial configuration of thyristors, whereas the volume and the inductance are strongly reduced. Due to its compactness and a newly developed gate unit with a high current rate and a dispersion less than 50 ns there is no requirement to protect the newly developed device by a snubber circuit (saturable reactors, freewheel diode, etc.). The compact thyristor stack was applied as main switch to a 50 kJ-capacitor. Together with a diode crowbar switch, also based on multichip technology, and an inductance, a pulse forming unit for electromagnetic launching applications has been built and tested successfully.
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