高性能SOI单极16掷射频开关

Caozheng Zhang, Libo Zheng, Zhengxuan Sheng, Jinghao Yu, Pengfei Ye, Yi Liu
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引用次数: 1

摘要

由于云计算、物联网(IoT)和5G通信的广泛使用,射频开关的重要性大大增加。本文采用130 nm射频绝缘体上硅(SOI) CMOS工艺实现了一种极低插入损耗(IL)和高线性度的单极十六掷(SP16T)开关,用于IoT/4G/5G多模多频段应用。该开关在0.9 GHz频率下的插入损耗为0.5 dB,在1.9 GHz频率下的插入损耗为0.57 dB。该SP16T开关还集成了一个用于射频前端模块(FEM)的控制器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A High-Performance SOI Single-pole Sixteen-throw RF Switch
The importance of RF switches has increased significantly since the widespread use of cloud computing, Internet of Things (IoT), and 5G communication. In this paper, an extremely low insertion loss (IL) and high linearity single-pole sixteen-throw (SP16T) switch has been implemented by using 130 nm RF silicon-on-insulator (SOI) CMOS process, which is intended for the IoT/4G/5G multi-mode multi-band applications. The switch shows a low insertion loss of 0.5 dB at a frequency of 0.9 GHz and 0.57 dB at a frequency of 1.9 GHz. This SP16T switch also integrates a controller to be used in the RF front-end module (FEM).
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