有机发光二极管的综合传导机制

Farzad Ahmadi Gooraji, M. Sharifi
{"title":"有机发光二极管的综合传导机制","authors":"Farzad Ahmadi Gooraji, M. Sharifi","doi":"10.1109/IRANIANCEE.2012.6292315","DOIUrl":null,"url":null,"abstract":"A comprehensive model is proposed for calculating I-V characteristic in single layer single carrier organic light emitting diodes (OLEDs). Unlike previous works, the model doesn't have any pre-assumption regarding the conduction regimes of Injection Limited Current (ILC) and Space Charge Limited Current (SCLC). For the first time, a quantitative index for the conduction regime is introduced which is included all the important factors regarding the conduction regime, such as bias voltage, barrier height, carrier mobility, device length, and temperature. Furthermore, the Index value versus barrier height and carrier mobility is examined in detail. Subsequently, it is demonstrated that the results agree extremely well with experimental data in a much wider range of bias than any before reported models.","PeriodicalId":308726,"journal":{"name":"20th Iranian Conference on Electrical Engineering (ICEE2012)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A comprehensive conduction regime in organic light emitting diodes\",\"authors\":\"Farzad Ahmadi Gooraji, M. Sharifi\",\"doi\":\"10.1109/IRANIANCEE.2012.6292315\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A comprehensive model is proposed for calculating I-V characteristic in single layer single carrier organic light emitting diodes (OLEDs). Unlike previous works, the model doesn't have any pre-assumption regarding the conduction regimes of Injection Limited Current (ILC) and Space Charge Limited Current (SCLC). For the first time, a quantitative index for the conduction regime is introduced which is included all the important factors regarding the conduction regime, such as bias voltage, barrier height, carrier mobility, device length, and temperature. Furthermore, the Index value versus barrier height and carrier mobility is examined in detail. Subsequently, it is demonstrated that the results agree extremely well with experimental data in a much wider range of bias than any before reported models.\",\"PeriodicalId\":308726,\"journal\":{\"name\":\"20th Iranian Conference on Electrical Engineering (ICEE2012)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"20th Iranian Conference on Electrical Engineering (ICEE2012)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRANIANCEE.2012.6292315\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"20th Iranian Conference on Electrical Engineering (ICEE2012)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2012.6292315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种计算单层单载流子有机发光二极管I-V特性的综合模型。与以往的工作不同,该模型没有对注入限流(ILC)和空间电荷限流(SCLC)的传导状态进行任何预先假设。本文首次引入了一个定量的传导指标,该指标包含了与传导有关的所有重要因素,如偏置电压、势垒高度、载流子迁移率、器件长度和温度。此外,指数值对势垒高度和载流子迁移率进行了详细的研究。随后,证明了结果与实验数据在更大的偏差范围内非常一致,而不是之前报道的任何模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A comprehensive conduction regime in organic light emitting diodes
A comprehensive model is proposed for calculating I-V characteristic in single layer single carrier organic light emitting diodes (OLEDs). Unlike previous works, the model doesn't have any pre-assumption regarding the conduction regimes of Injection Limited Current (ILC) and Space Charge Limited Current (SCLC). For the first time, a quantitative index for the conduction regime is introduced which is included all the important factors regarding the conduction regime, such as bias voltage, barrier height, carrier mobility, device length, and temperature. Furthermore, the Index value versus barrier height and carrier mobility is examined in detail. Subsequently, it is demonstrated that the results agree extremely well with experimental data in a much wider range of bias than any before reported models.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信