{"title":"RFC技术对600 V快速恢复二极管的低损耗和高动态坚固性有很大影响","authors":"F. Masuoka, K. Nakamura, A. Nishii, T. Terashima","doi":"10.1109/ISPSD.2012.6229099","DOIUrl":null,"url":null,"abstract":"In the fast recovery operation of Free-wheeling Diode (FWD), to reduce voltage surge “snap-off”, we propose the Relaxed Field of Cathode (RFC)-planar anode diode in the range of 600 V to 1700 V. RFC effect is described by the parallel connection of pin diode and pnp transistor in as a single chip solution. Its structure is realized by our thin wafer process technology utilizing the backside lithography to make p/n alternating pattern after thining the wafer. As the result, our RFC diode up to 1700 V has the following three advantages comparing with the conventional one: (a) 40% lower recovery loss (EREC), 30% lower forward voltage drop (VF), (b) a large recovery Safe Operating Area (SOA) with the high peak power density of 1.4W/cm2 and (c) easiness to adjust a lower crosspoint below rated current density in the output I-V. Therefore, the proposed RFC diode has a great potential as the next generation Si FWD in the all voltage range.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Great impact of RFC technology on fast recovery diode towards 600 V for low loss and high dynamic ruggedness\",\"authors\":\"F. Masuoka, K. Nakamura, A. Nishii, T. Terashima\",\"doi\":\"10.1109/ISPSD.2012.6229099\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the fast recovery operation of Free-wheeling Diode (FWD), to reduce voltage surge “snap-off”, we propose the Relaxed Field of Cathode (RFC)-planar anode diode in the range of 600 V to 1700 V. RFC effect is described by the parallel connection of pin diode and pnp transistor in as a single chip solution. Its structure is realized by our thin wafer process technology utilizing the backside lithography to make p/n alternating pattern after thining the wafer. As the result, our RFC diode up to 1700 V has the following three advantages comparing with the conventional one: (a) 40% lower recovery loss (EREC), 30% lower forward voltage drop (VF), (b) a large recovery Safe Operating Area (SOA) with the high peak power density of 1.4W/cm2 and (c) easiness to adjust a lower crosspoint below rated current density in the output I-V. Therefore, the proposed RFC diode has a great potential as the next generation Si FWD in the all voltage range.\",\"PeriodicalId\":371298,\"journal\":{\"name\":\"2012 24th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 24th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2012.6229099\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 24th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2012.6229099","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Great impact of RFC technology on fast recovery diode towards 600 V for low loss and high dynamic ruggedness
In the fast recovery operation of Free-wheeling Diode (FWD), to reduce voltage surge “snap-off”, we propose the Relaxed Field of Cathode (RFC)-planar anode diode in the range of 600 V to 1700 V. RFC effect is described by the parallel connection of pin diode and pnp transistor in as a single chip solution. Its structure is realized by our thin wafer process technology utilizing the backside lithography to make p/n alternating pattern after thining the wafer. As the result, our RFC diode up to 1700 V has the following three advantages comparing with the conventional one: (a) 40% lower recovery loss (EREC), 30% lower forward voltage drop (VF), (b) a large recovery Safe Operating Area (SOA) with the high peak power density of 1.4W/cm2 and (c) easiness to adjust a lower crosspoint below rated current density in the output I-V. Therefore, the proposed RFC diode has a great potential as the next generation Si FWD in the all voltage range.
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