{"title":"可重写n通道FAMOS器件的退化机制","authors":"R. Dockerty","doi":"10.1109/IRPS.1975.362669","DOIUrl":null,"url":null,"abstract":"Electrically rewritable n-channel FAMOS devices were fabricated with a floating polycrystalline silicon gate and an Al control gate. The Al gate is used to control injection of holes or electrons from the avalanching drain diffusion onto the floating gate. Charge retention by the floating gate and device degradation due to multiple write/erase cycling is discussed.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Degradation Mechanisms in Rewritable N-Channel FAMOS Devices\",\"authors\":\"R. Dockerty\",\"doi\":\"10.1109/IRPS.1975.362669\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrically rewritable n-channel FAMOS devices were fabricated with a floating polycrystalline silicon gate and an Al control gate. The Al gate is used to control injection of holes or electrons from the avalanching drain diffusion onto the floating gate. Charge retention by the floating gate and device degradation due to multiple write/erase cycling is discussed.\",\"PeriodicalId\":369161,\"journal\":{\"name\":\"13th International Reliability Physics Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1975-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1975.362669\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1975.362669","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Degradation Mechanisms in Rewritable N-Channel FAMOS Devices
Electrically rewritable n-channel FAMOS devices were fabricated with a floating polycrystalline silicon gate and an Al control gate. The Al gate is used to control injection of holes or electrons from the avalanching drain diffusion onto the floating gate. Charge retention by the floating gate and device degradation due to multiple write/erase cycling is discussed.
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