一种新型双势垒栅极分离槽增强模式AlGaN/GaN HFET

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-01 DOI:10.1109/EDSSC.2019.8754371

Xingchang Fu, Y. Lv, Li-Jiang Zhang, Xian-jie Li, Tong Zhang

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引用次数: 0

摘要

本文提出了一种新型的增强模式AlGaN/GaN双势垒栅分离槽异质结构场效应晶体管(DB-GSG HFET)，其三个栅极之间存在两个阻挡势垒，通过干刻蚀实现。由于漏极侧阻挡层对漏极电压的屏蔽作用，DBGSG HFET源侧阻挡层几乎不受漏极电压的影响。结果表明，与栅极分离槽(GSG)相比，DB-GSG HFET的电特性得到了明显改善。

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A Novel Enhancement-Mode AlGaN/GaN HFET with Double-Barrier Gates-Separating Groove

In this paper, a novel enhancement-mode AlGaN/GaN double-barrier gates-separating groove heterostructure field-effect transistor (DB-GSG HFET) is proposed, in which two block barriers exist among the three gates as realized by dry etching. Because of the shielding effect of drain-side block barrier on drain voltage, the source-side block barrier is almost unaffected by drain voltage in the DBGSG HFET. As a result, the electrical characteristics of the DB-GSG HFET are improved obviously, compared with the gates-separating groove (GSG) HFET which has only one single block barrier between double gates.

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来源期刊

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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