硅半导体探测器对低能离子的响应

1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255) Pub Date : 1998-11-08 DOI:10.1109/NSSMIC.1998.774287

F. Sato, T. Tanaka, T. Iida

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引用次数: 0

摘要

利用单离子辐照系统测量了硅表面势垒探测器对低于40 keV的低能离子的响应。利用典型能谱系统和数字示波器的平均方法，精确地获得了低能区H/sup +/、He/sup +/和Ar/sup +/的脉冲高度响应数据。实验数据与离子输运计算机模拟程序MARLOWE计算结果基本一致。

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Response of silicon semiconductor detector to low-energy ions

The response of a silicon surface barrier detector to low-energy ions below 40 keV were measured utilizing a single ion irradiation system. Data on pulse-height response to H/sup +/, He/sup +/ and Ar/sup +/ in the low-energy region were precisely obtained with a typical energy spectroscopy system and an averaging method with a digital oscilloscope. The experimental data agreed generally with results calculated by the computer simulation code for ion transportation, MARLOWE.

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1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255)

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