{"title":"一种0.5-6 GHz改进线性度、阻性反馈的90纳米CMOS LNA","authors":"B. Perumana, J. Zhan, S. S. Taylor, J. Laskar","doi":"10.1109/ASSCC.2006.357901","DOIUrl":null,"url":null,"abstract":"This paper presents a resistive feedback broadband LNA in 90 nm CMOS which occupies 50 mum times 270 mum of active area. The LNA has 7 GHz 3 dB bandwidth and >24 dB voltage gain. Across 0.5-6 GHz, its input matching is better than -10 dB, noise figure below 2.5 dB, and iIP3 better than -8 dBm. Techniques to improve linearity in resistive feedback LNAs are discussed in detail. The LNA also provides an additional low power mode operation.","PeriodicalId":142478,"journal":{"name":"2006 IEEE Asian Solid-State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"A 0.5-6 GHz Improved Linearity, Resistive Feedback 90-nm CMOS LNA\",\"authors\":\"B. Perumana, J. Zhan, S. S. Taylor, J. Laskar\",\"doi\":\"10.1109/ASSCC.2006.357901\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a resistive feedback broadband LNA in 90 nm CMOS which occupies 50 mum times 270 mum of active area. The LNA has 7 GHz 3 dB bandwidth and >24 dB voltage gain. Across 0.5-6 GHz, its input matching is better than -10 dB, noise figure below 2.5 dB, and iIP3 better than -8 dBm. Techniques to improve linearity in resistive feedback LNAs are discussed in detail. The LNA also provides an additional low power mode operation.\",\"PeriodicalId\":142478,\"journal\":{\"name\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2006.357901\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2006.357901","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.5-6 GHz Improved Linearity, Resistive Feedback 90-nm CMOS LNA
This paper presents a resistive feedback broadband LNA in 90 nm CMOS which occupies 50 mum times 270 mum of active area. The LNA has 7 GHz 3 dB bandwidth and >24 dB voltage gain. Across 0.5-6 GHz, its input matching is better than -10 dB, noise figure below 2.5 dB, and iIP3 better than -8 dBm. Techniques to improve linearity in resistive feedback LNAs are discussed in detail. The LNA also provides an additional low power mode operation.