低功耗，宽电源电压带隙参考电路在28nm CMOS

2015 IEEE Jordan Conference on Applied Electrical Engineering and Computing Technologies (AEECT) Pub Date : 2015-11-01 DOI:10.1109/AEECT.2015.7360547

F. Neri, T. Brauner, E. De Mey, C. Schippel

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引用次数: 4

摘要

本文提出了一种集成带隙参考电路，该电路采用电流模结构，解决了低电流消耗和宽电源电压范围的问题。该带隙基准电路嵌入到精密的GNSS接收器电源管理单元(PMU)中，输出电压为0.60 V，在-40°C至125°C的范围内，温度系数可达33 ppm/°C。当电源电压为1.4 V时，功率仅为3.5 μW，在直流频率下PSRR为57 dB。该带隙参考芯片面积为0.125 mm2，已在Globalfoundries的CMOS 28纳米技术中实现，并在实验室中成功验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low-power, wide supply voltage bandgap reference circuit in 28nm CMOS

This paper presents an integrated bandgap reference circuit which is addressing low current consumption and a wide supply voltage range, using a current mode structure. Embedded in a sophisticated Power Management Unit (PMU) for a GNSS receiver, this bandgap reference has an output of 0.60 V and it can reach a temperature coefficient of 33 ppm/°C in the range from -40 °C to 125 °C. With a 1.4 V supply voltage, the power is only 3.5 μW and the PSRR is 57 dB at DC frequency. Occupying 0.125 mm2 chip area, this bandgap reference has been implemented in the CMOS 28 nm technology from Globalfoundries and successfully validated in the lab.

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2015 IEEE Jordan Conference on Applied Electrical Engineering and Computing Technologies (AEECT)

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