低电流概率写入节能STT-RAM缓存

Nikolaos Strikos, Vasileios Kontorinis, Xiangyu Dong, H. Homayoun, D. Tullsen
{"title":"低电流概率写入节能STT-RAM缓存","authors":"Nikolaos Strikos, Vasileios Kontorinis, Xiangyu Dong, H. Homayoun, D. Tullsen","doi":"10.1109/ICCD.2013.6657095","DOIUrl":null,"url":null,"abstract":"MRAM has emerged as one of the most attractive non-volatile solutions due to fast read access, low leakage power, high bit density, and long endurance. However, the high power consumption of write operations remains a barrier to the commercial adoption of MRAM technology. This paper addresses this problem by introducing low-current probabilistic writes (LCPW), a technique that reduces write access energy by lowering the amplitude of the write current pulse. Although low current pulses no longer guarantee successful bit write operations, we propose and evaluate a simple technique to ensure correctness and achieve significant power reduction over a typical MRAM implementation.","PeriodicalId":398811,"journal":{"name":"2013 IEEE 31st International Conference on Computer Design (ICCD)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Low-current probabilistic writes for power-efficient STT-RAM caches\",\"authors\":\"Nikolaos Strikos, Vasileios Kontorinis, Xiangyu Dong, H. Homayoun, D. Tullsen\",\"doi\":\"10.1109/ICCD.2013.6657095\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MRAM has emerged as one of the most attractive non-volatile solutions due to fast read access, low leakage power, high bit density, and long endurance. However, the high power consumption of write operations remains a barrier to the commercial adoption of MRAM technology. This paper addresses this problem by introducing low-current probabilistic writes (LCPW), a technique that reduces write access energy by lowering the amplitude of the write current pulse. Although low current pulses no longer guarantee successful bit write operations, we propose and evaluate a simple technique to ensure correctness and achieve significant power reduction over a typical MRAM implementation.\",\"PeriodicalId\":398811,\"journal\":{\"name\":\"2013 IEEE 31st International Conference on Computer Design (ICCD)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 31st International Conference on Computer Design (ICCD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCD.2013.6657095\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 31st International Conference on Computer Design (ICCD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCD.2013.6657095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

摘要

由于快速读取、低泄漏功率、高比特密度和长寿命,MRAM已成为最具吸引力的非易失性解决方案之一。然而,写入操作的高功耗仍然是MRAM技术商业应用的障碍。本文通过引入低电流概率写入(LCPW)来解决这个问题,LCPW是一种通过降低写入电流脉冲幅度来减少写入访问能量的技术。虽然低电流脉冲不再保证成功的比特写入操作,但我们提出并评估了一种简单的技术,以确保正确性,并在典型的MRAM实现中实现显著的功耗降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-current probabilistic writes for power-efficient STT-RAM caches
MRAM has emerged as one of the most attractive non-volatile solutions due to fast read access, low leakage power, high bit density, and long endurance. However, the high power consumption of write operations remains a barrier to the commercial adoption of MRAM technology. This paper addresses this problem by introducing low-current probabilistic writes (LCPW), a technique that reduces write access energy by lowering the amplitude of the write current pulse. Although low current pulses no longer guarantee successful bit write operations, we propose and evaluate a simple technique to ensure correctness and achieve significant power reduction over a typical MRAM implementation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信