{"title":"基于神经空间映射的弹道碳纳米管晶体管建模","authors":"R. Yousefi, K. Saghafi","doi":"10.1109/ICCEE.2008.123","DOIUrl":null,"url":null,"abstract":"In this paper we present a neural space mapping (NSM) SPICE-compatible modeling technique for carbon nanotubes in their ballistic limit. We modified conventional MOSFET equations and used NSM concept in order to correct these equations in the manner that to be usable to carbon nanotube transistors. We used Fettoy model (which is applicable to MOSCNT structures) to compare accuracy. We have shown that our model has reasonable accuracy at different biases and physical parameters.","PeriodicalId":365473,"journal":{"name":"2008 International Conference on Computer and Electrical Engineering","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling of Ballistic Carbon Nanotube Transistors by Neural Space Mapping\",\"authors\":\"R. Yousefi, K. Saghafi\",\"doi\":\"10.1109/ICCEE.2008.123\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present a neural space mapping (NSM) SPICE-compatible modeling technique for carbon nanotubes in their ballistic limit. We modified conventional MOSFET equations and used NSM concept in order to correct these equations in the manner that to be usable to carbon nanotube transistors. We used Fettoy model (which is applicable to MOSCNT structures) to compare accuracy. We have shown that our model has reasonable accuracy at different biases and physical parameters.\",\"PeriodicalId\":365473,\"journal\":{\"name\":\"2008 International Conference on Computer and Electrical Engineering\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Conference on Computer and Electrical Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCEE.2008.123\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Computer and Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCEE.2008.123","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of Ballistic Carbon Nanotube Transistors by Neural Space Mapping
In this paper we present a neural space mapping (NSM) SPICE-compatible modeling technique for carbon nanotubes in their ballistic limit. We modified conventional MOSFET equations and used NSM concept in order to correct these equations in the manner that to be usable to carbon nanotube transistors. We used Fettoy model (which is applicable to MOSCNT structures) to compare accuracy. We have shown that our model has reasonable accuracy at different biases and physical parameters.
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