利用LSCVD沉积Si3N4薄膜的Bragg光栅耦合高Q因子环形谐振器

2017 22nd Microoptics Conference (MOC) Pub Date : 2017-11-19 DOI:10.23919/MOC.2017.8244509

Xiaoyang Cheng, S. Yokoyama

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引用次数: 0

摘要

采用LSCVD技术，在150°C的温度下制备了低光学损耗的高质量氮化硅薄膜。研究了一种基于沉积态氮化硅的微环谐振器，其q因子为5.2×104。为了提高耦合效率，在母线端制作了布拉格光栅。LSCVD沉积的Si3N4证明了其作为光子集成平台的可行性。

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Bragg grating coupled high Q factor ring resonator using LSCVD deposited Si3N4 film

High-quality Si3N4 films with low optical loss were deposited at 150°C using LSCVD. A micro-ring resonator based on as-deposited Si3N4 with Q-factor of 5.2×10⁴ has been demonstrated. Bragg gratings are fabricated at bus ends to improve coupling efficiency. The LSCVD deposited Si3N4 exemplify its viability as a photonic integration platform.

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来源期刊

2017 22nd Microoptics Conference (MOC)

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