用于20 W和43% PAE x波段MMIC放大器的高PAE 1mm AlGaN/GaN HEMTs

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346801

J. Moon, D. Wong, M. Antcliffe, P. Hashimoto, M. Hu, P. Willadsen, M. Micovic, H. Moyer, A. Kurdoghlian, P. Macdonald, M. Wetzel, R. Bowen

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引用次数: 14

摘要

这项工作代表了大型门外围分立GaN hemt器件的最新性能及其在GaN MMIC放大器中的应用，该放大器在同时输出功率，PAE和MMIC功率密度方面具有最先进的性能

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High PAE 1mm AlGaN/GaN HEMTs for 20 W and 43% PAE X-band MMIC Amplifiers

This work represents state-of-the-art performances of both large gateperiphery discrete GaN HEMTs devices and its application toward GaN MMICs amplifiers with state-of-the-art performances in simultaneous output power, PAE, and MMIC power density

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2006 International Electron Devices Meeting

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