用于嵌入式闪存技术的本地化ONO存储器(LONOM)的完全集成和表征

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345502

I. Cho, B. Lim, J. Kim, S.S. Kim, K. Kim, B.J. Lee, G. Bae, N. Lee, S.H. Kim, K. Koh, H. Kang, M. Seo, S.W. Kim, S.H. Hwang, D.Y. Lee, M.C. Kim, S. Chae, S. Seo, C.W. Kim

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引用次数: 3

摘要

我们已经成功地集成了8M位本地化ONO存储器(LONOM)，用于嵌入式非易失性存储器，使用0.13um标准逻辑工艺和5级铜金属化。它具有0.276UM的小单元尺寸和最简单的单元阵列结构。在没有任何特殊算法的情况下，LONOM的本地化存储层可以满足嵌入式存储器解决方案的基本特征，如低程序电流。无干扰读取操作，耐久性好。在V/sub /=0.9V, 85/spl度/C时读取速度高达60MHz，在Vcc = 1.4V时电流消耗低于5mA。

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Full integration and characterization of Localized ONO Memory (LONOM) for embedded flash technology

We have successfully integrated 8M bits Localized ONO Memory (LONOM) for the embedded nonvolatile memory using 0.13um standard logic process with 5-level Cu metallization. which has a small cell size of 0.276UM and the simplest cell array structure. Without any special algorithm, the localized storage layer of the LONOM can satisfy the essential features for an embedded memory solution, such as low program current. disturb-free read operation and good endurance characteristics. The read speed is as high as 60MHz at V/sub cc/=0.9V, 85/spl deg/C and the current consumption is lower than 5mA at Vcc = 1.4V.

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Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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