I_V Characteristic of Vertical Double Diffused Metal Oxide Semiconductor (VDMOS) Power Transistor Using Silvaco-TCAD

Today's electronics scenario finds itself with the advancement in the field of foremost important component MOSFET. Though one-step ahead of MOSFET, power MOS transistor such as VDMOS has recently begun to rival bipolar devices in power handling capability. In this paper, the results of simulation of VDMOS transistor have been presented. Additionally, the transfer characteristics of the VDMOS transistor are simulated. The drain current (Ids) as a function of the gate voltage and of the drain voltage was simulated for different work function values as well as for several oxide thickness and gate lengths, respectively. The results obtained show that when the work function and the oxide thickness as well as the gate length increase, the threshold voltage also increases. The VDMOS transistor is virtually fabricated using ATHENA software and simulation is done with help of ATLAS software and all graphs are plotted using Tonyplot in Silvaco.