{"title":"高光电子分辨率传感器c系列SiPM在低温下的性能","authors":"M. Biroth, P. Achenbach, W. Lauth, Andreas Thomas","doi":"10.1109/NSSMIC.2016.8069771","DOIUrl":null,"url":null,"abstract":"The C-Series of silicon photomultipliers (SiPM) from SensL provides devices with a fast response and high performance at low cost. The device's ability to detect light at temperatures of liquid nitrogen (77K) and liquid helium (4 K) with high photoelectron resolution was demonstrated. Results include relative photon detection efficiency (PDE), gain, microcell capacitance, and cross-talk probability at different over-voltages, both at room and at cryogenic temperatures. At 77K the SiPM demonstrated significantly improved operating characteristics while at 4K the observed increase in break-down voltage, the reduction of PDE by a factor of 2-3, and the extensively dropped microcell capacitance degraded the performance.","PeriodicalId":184587,"journal":{"name":"2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Performance of sensl C-Series SiPM with high photoelectron resolution at cryogenic temperatures\",\"authors\":\"M. Biroth, P. Achenbach, W. Lauth, Andreas Thomas\",\"doi\":\"10.1109/NSSMIC.2016.8069771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The C-Series of silicon photomultipliers (SiPM) from SensL provides devices with a fast response and high performance at low cost. The device's ability to detect light at temperatures of liquid nitrogen (77K) and liquid helium (4 K) with high photoelectron resolution was demonstrated. Results include relative photon detection efficiency (PDE), gain, microcell capacitance, and cross-talk probability at different over-voltages, both at room and at cryogenic temperatures. At 77K the SiPM demonstrated significantly improved operating characteristics while at 4K the observed increase in break-down voltage, the reduction of PDE by a factor of 2-3, and the extensively dropped microcell capacitance degraded the performance.\",\"PeriodicalId\":184587,\"journal\":{\"name\":\"2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSSMIC.2016.8069771\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.2016.8069771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance of sensl C-Series SiPM with high photoelectron resolution at cryogenic temperatures
The C-Series of silicon photomultipliers (SiPM) from SensL provides devices with a fast response and high performance at low cost. The device's ability to detect light at temperatures of liquid nitrogen (77K) and liquid helium (4 K) with high photoelectron resolution was demonstrated. Results include relative photon detection efficiency (PDE), gain, microcell capacitance, and cross-talk probability at different over-voltages, both at room and at cryogenic temperatures. At 77K the SiPM demonstrated significantly improved operating characteristics while at 4K the observed increase in break-down voltage, the reduction of PDE by a factor of 2-3, and the extensively dropped microcell capacitance degraded the performance.