SiGe BiCMOS中的77 ghz和94 ghz下变频混频器

S. Reynolds, J. Powell
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引用次数: 21

摘要

在0.13 μ m SiGe BiCMOS技术下,实现了工作在77 GHz和94 GHz左右的双转换超外差下变频模块。两者都使用单平衡射频混频器将信号下转换为8.8 GHz中频,然后将其放大并第二次下转换到基带。77 GHz电路在77 GHz时实现了12.8 dB的最高SSB NF,在76 GHz时实现了<12 dB,转换增益为20 dB,输入参考1 dB压缩点为-14.7 dBm。94 GHz电路在94 GHz时实现17.2 dB的最高SSB NF,转换增益为15 dB,输入参考1 dB压缩点为-10.7 dBm。两种电路在RF混频器核心中都使用3.2 mA的偏置电流,来自3-V电源的总测试场功耗为120 mA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
77 and 94-GHz Downconversion Mixers in SiGe BiCMOS
Double-conversion superheterodyne downconverter blocks operating around 77 GHz and 94 GHz have been realized in 0.13-mum SiGe BiCMOS technology. Both use a single-balanced RF mixer to downconvert the signal to an 8.8 GHz IF, which is amplified and downconverted a second time to baseband. The 77-GHz circuit achieves an upper SSB NF of 12.8 dB at 77 GHz and <12 dB at 76 GHz, with 20 dB of conversion gain and an input-referred 1-dB compression point of -14.7 dBm. The 94-GHz circuit achieves an upper SSB NF of 17.2 dB at 94 GHz, with 15 dB of conversion gain and an input-referred 1-dB compression point of -10.7 dBm. Both circuits use a bias current of 3.2 mA in the RF mixer core, with total testsite power consumption of 120 mA from a 3-V supply.
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