ZnS(En)0.5纳米结构材料的寿命

Lorena Cerezo, A. Hernández-Gordillo, S. Rodil
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摘要

光催化制氢是一种替代方法,有助于取代化石燃料,提供清洁高效的能源。这种光催化还原反应发生在半导体表面,其中粉末或薄膜半导体通常在水溶液中工作,但为了发生这种反应,半导体材料的能带边缘和水化学物质的氧化还原电位必须匹配。在这条线上,金属氧化物、金属硫化物和杂化配合物等多种半导体材料都得到了很好的表现,表现出了产生大量光生载流子的巨大能力和低复合率[2][3]。近年来,一种相对较新的ZnS(en) 0.5杂化材料逐渐受到人们的关注,因为它具有一致的层流结构,可以是单原子ZnS层,也可以是多原子ZnS层,使得多层ZnS层可以堆叠成[4]。这种叠层上层结构有利于其在光催化h2生成过程中原位剥离,使其活性至少提高2倍。采用大规模溶剂热法和沉淀法,在水、丁醇和乙二胺的混合溶液中合成了ZnS(en) 0.5杂化粉体的棱柱六角形片状和不规则无序片状。研究了固定或改变混合溶液体积(h2o /Zn摩尔比函数)和处理时间对复合材料堆积度的影响
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ZnS(En)0.5 Nanostructured Materials Timelife
Extended Abstract Photocatalytic hydrogen production is an alternative process that has taken place to contribute to the displacement of fossil fuels and provide a clean and efficient energy source. This photocatalytic reduction reaction occurs on a semiconductor surface, where the powder or film semiconductor typically works in an aqueous solution, but for this happened, the energy band edges of semiconductor material and the redox potentials of the aqueous chemical species must be matched [1] . In this line, a variety of semiconductors materials like metal oxide, metal sulfide and hybrid complex has been well performed, exhibiting a great capacity to produce huge quantity of photogenerated charge carriers and having a low recombination rate [2][3] . In recent years the relatively new kind of ZnS(en) 0.5 hybrid material has been slowly gaining attention, due to the conformed laminar structure, mono or multiple atomic ZnS layers, allowing that multilayers will be stacked [4] . Such stacking superstructure configuration facilitates that it can be exfoliated in situ during the photocatalytic H 2 production, increasing its activity at least 2 times. Prismatic hexagonal plates and small irregular disordered sheets of ZnS(en) 0.5 hybrid powders were synthesized in a mixed solution of water, butanol and ethylenediamine by grand scale solvothermal and precipitation method. The influence of the fixed or varied volume of mixed solution as function of molar ratio H 2 O/Zn and the treatment time on the stacking degree of the
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