B. Heinemann, Holger Rücker, R. Barth, F. Barwolf, J. Drews, G. Fischer, A. Fox, O. Fursenko, T. Grabolla, Frank Herzel, J. Katzer, J. Korn, A. Kruger, P. Kulse, T. Lenke, M. Lisker, S. Marschmeyer, A. Scheit, D. Schmidt, J. Schmidt, Markus Andreas Schubert, A. Trusch, Ch. Wipf, D. Wolansky
{"title":"SiGe HBT with fx/fmax of 505 GHz/720 GHz","authors":"B. Heinemann, Holger Rücker, R. Barth, F. Barwolf, J. Drews, G. Fischer, A. Fox, O. Fursenko, T. Grabolla, Frank Herzel, J. Katzer, J. Korn, A. Kruger, P. Kulse, T. Lenke, M. Lisker, S. Marschmeyer, A. Scheit, D. Schmidt, J. Schmidt, Markus Andreas Schubert, A. Trusch, Ch. Wipf, D. Wolansky","doi":"10.1109/IEDM.2016.7838335","DOIUrl":null,"url":null,"abstract":"An experimental SiGe HBT technology featuring fT/fmax/BVCEO = 505 GHz/720 GHz/1.6 V and a minimum CML ring oscillator gate delay of 1.34 ps is presented. The improved speed compared to our previous SiGe HBT developments originates primarily from an optimized vertical profile, an additional decrease of the base and emitter resistance which is made possible by combining millisecond annealing with a low-temperature backend, and from lateral device scaling.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"130","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838335","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An experimental SiGe HBT technology featuring fT/fmax/BVCEO = 505 GHz/720 GHz/1.6 V and a minimum CML ring oscillator gate delay of 1.34 ps is presented. The improved speed compared to our previous SiGe HBT developments originates primarily from an optimized vertical profile, an additional decrease of the base and emitter resistance which is made possible by combining millisecond annealing with a low-temperature backend, and from lateral device scaling.
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