紧凑型x波段MMIC LNA用于MFC的接收单元

2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM) Pub Date : 2021-11-28 DOI:10.1109/iWEM53379.2021.9790669

Zhengxing Zuo, Shufeng Sun

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引用次数: 0

摘要

提出了一种基于0.25µm e模pHEMT工艺的x波段低噪声放大器，用于多功能芯片的接收端。两级放大器均采用双电源供电，+3 V漏极和+0.7 V栅极工作，第一级采用最小噪声匹配，第二级采用RLC负反馈，以提高放大器的整体增益平坦度。x波段LNA在8-12Ghz范围内的性能表现如下:NF>1.5 dB;S21>19 dB，增益平坦度小于0.5 dB;VSWR1 < 1.9, VSWR2 < 1.6;芯片尺寸为1.75mmX0.8mm，满足MFC对单元电路的紧凑要求。

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Compact X-band MMIC LNA for MFC's receiver unit

An X-band low-noise amplifier based on a 0.25µm E-mode pHEMT process for the receiver side of a multifunctional chip is presented. Both stages of the amplifier are dual-supply powered with +3 V drain and +0.7 V gate operation, and the first stage uses minimum noise matching while the second stage uses RLC negative feedback to improve the overall gain flatness of the amplifier. The performance of the X-band LNA in the 8-12Ghz range are as follows: NF>1.5 dB; S21>19 dB, gain flatness less than 0.5 dB; VSWR1<1.9, VSWR2<1.6; the chip size is 1.75mmX0.8mm, meeting the compact requirements of the MFC for the cell circuit.

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来源期刊

2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM)

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