采用35 /spl mu/m厚氧化物制造技术的高品质射频无源集成

I. Jeong, Choong-Mo Nam, Chang Yup Lee, Jung-Hoon Moon, Jongsoo Lee, Dong-Wook Kim, Y. Kwon
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引用次数: 18

摘要

无线行业在成本和尺寸缩减方面的巨大压力,促使手机制造商为自己的产品寻找新的、革命性的解决方案。在各种方法中,被动集成是最具吸引力的方法。为了实现大幅缩小尺寸和额外降低成本的目标,我们开发了低成本的射频衬底制造技术和射频集成无源器件的高性能工艺技术,通过电化学在硅晶片上形成厚氧化物,并使用Cu金属和BCB材料进行金属互连和中间层。所制备的衬底为传统的6"硅晶片,表面SiO/sub /厚度为25 /spl μ m。在50 /spl ω /共面传输线(W=50 /spl mu/m, G=20 /spl mu/m)情况下,该衬底在4 GHz时具有0.03 dB/mm的良好插入损耗,包括导电金属损耗,为射频无源集成提供了经济有效的解决方案。基于这些工艺技术,我们在Si上制作了超高Q电感器,其质量因子最高可达120。在厚氧化硅上制备了几种集成无源器件(RFIPD),尽管芯片尺寸小,但它们表现出良好的射频性能。采用分压器时,插入损耗小于0.5 dB,隔离度大于25 dB。900 MHz低通滤波器具有0.5 dB的插入损耗和超过25 dB的二次和三次谐波衰减。这些将广泛应用于手持式模块和系统,其中尺寸或体积效率是一个关键的购买标准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High quality RF passive integration using 35 /spl mu/m thick oxide manufacturing technology
The strong pressure of cost and size reduction in wireless industry makes the phone makers find new and revolutionary solutions for their products. Among the various approaches, the passive integration is the most attractive way. To achieve both goals of dramatic size reduction and additional cost reduction, we developed low cost manufacturing technology for RF substrate and high performance process technology for RF integrated passive devices by electrochemically forming thick oxide on Si wafer and using Cu metal and BCB material for metal interconnection and interlayer. The fabricated substrate is conventional 6" Si wafer with SiO/sub 2/ thickness of 25 /spl mu/m on the surface. This substrate showed the very good insertion loss of 0.03 dB/mm at 4 GHz, including conductive metal loss, in case of 50 /spl Omega/ coplanar transmission line (W=50 /spl mu/m, G=20 /spl mu/m), and provided cost-effective solution in RF passive integration. Based on these process technologies, we fabricated ultra high Q inductor on Si, which showed the maximum quality factor of 120. Several RFIPD (Integrated Passive Device) were also fabricated on thick oxide silicon and they showed good RF performances in spite of small chip size. In case of power divider, the insertion loss is below 0.5 dB and isolation is more than 25 dB. The 900 MHz low pass filter has 0.5 dB insertion loss and more than 25 dB attenuation at second and third harmonics. These will be widely utilized in hand-held module and system where the size or volumetric efficiency is a critical buying criterion.
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