{"title":"超高频100W GaN HEMT功率放大器的设计与实现","authors":"Parul Gupta, M. Mishra, Sudhir Kumar","doi":"10.23919/URSI-RCRS56822.2022.10118553","DOIUrl":null,"url":null,"abstract":"This paper presents design and implementation of a power amplifier using packaged GaN HEMT (High electron mobility transistor) device and delivering an output power of 100W at 1-dB compression in UHF (400–450 MHz) band. To drive this 100W power amplifier, a driver amplifier delivering 10 W linear output power has also been designed. Both the amplifiers have been designed and integrated in the total chain delivering an output power of 1KW.","PeriodicalId":229743,"journal":{"name":"2022 URSI Regional Conference on Radio Science (USRI-RCRS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Implementation of 100W GaN HEMT Power Amplifier in UHF band\",\"authors\":\"Parul Gupta, M. Mishra, Sudhir Kumar\",\"doi\":\"10.23919/URSI-RCRS56822.2022.10118553\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents design and implementation of a power amplifier using packaged GaN HEMT (High electron mobility transistor) device and delivering an output power of 100W at 1-dB compression in UHF (400–450 MHz) band. To drive this 100W power amplifier, a driver amplifier delivering 10 W linear output power has also been designed. Both the amplifiers have been designed and integrated in the total chain delivering an output power of 1KW.\",\"PeriodicalId\":229743,\"journal\":{\"name\":\"2022 URSI Regional Conference on Radio Science (USRI-RCRS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 URSI Regional Conference on Radio Science (USRI-RCRS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/URSI-RCRS56822.2022.10118553\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 URSI Regional Conference on Radio Science (USRI-RCRS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/URSI-RCRS56822.2022.10118553","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and Implementation of 100W GaN HEMT Power Amplifier in UHF band
This paper presents design and implementation of a power amplifier using packaged GaN HEMT (High electron mobility transistor) device and delivering an output power of 100W at 1-dB compression in UHF (400–450 MHz) band. To drive this 100W power amplifier, a driver amplifier delivering 10 W linear output power has also been designed. Both the amplifiers have been designed and integrated in the total chain delivering an output power of 1KW.
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