{"title":"CdTe薄膜光伏:技术如何发展以及未来的挑战","authors":"C. Ferekides, C. Hsu","doi":"10.23919/AM-FPD.2019.8830556","DOIUrl":null,"url":null,"abstract":"This paper reviews the evolution of CdTe photovoltaics since the first CdTe/CdS solar cells were reported in the early 70’s with modest efficiencies (~5%). Today’s commercial CdTe thin film modules have areas of 2.5 m2 and efficiencies of 17–18%; small area cells are over 22% efficiency. In reaching this performance, the typical/original CdTe/CdS hetero-structure evolved into a CdTe/Cd(Se)Te/MZO (Magnesium Zing Oxide). The technology continues to rely on a post-deposition heat-treatment (in the presence of CdCl2), and the use of Cu (p-type dopant) for the formation of the back contact. Advancing performance to higher levels will depend on the CdTe community’s ability to address key device and material properties (net p-type doping) that limit the cell’s open circuit voltage to 0.9 Volts.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"26th 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CdTe Thin Film PV: How Has the Technology Evolved and What Challenges Lie Ahead\",\"authors\":\"C. Ferekides, C. Hsu\",\"doi\":\"10.23919/AM-FPD.2019.8830556\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reviews the evolution of CdTe photovoltaics since the first CdTe/CdS solar cells were reported in the early 70’s with modest efficiencies (~5%). Today’s commercial CdTe thin film modules have areas of 2.5 m2 and efficiencies of 17–18%; small area cells are over 22% efficiency. In reaching this performance, the typical/original CdTe/CdS hetero-structure evolved into a CdTe/Cd(Se)Te/MZO (Magnesium Zing Oxide). The technology continues to rely on a post-deposition heat-treatment (in the presence of CdCl2), and the use of Cu (p-type dopant) for the formation of the back contact. Advancing performance to higher levels will depend on the CdTe community’s ability to address key device and material properties (net p-type doping) that limit the cell’s open circuit voltage to 0.9 Volts.\",\"PeriodicalId\":129222,\"journal\":{\"name\":\"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"26th 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/AM-FPD.2019.8830556\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2019.8830556","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CdTe Thin Film PV: How Has the Technology Evolved and What Challenges Lie Ahead
This paper reviews the evolution of CdTe photovoltaics since the first CdTe/CdS solar cells were reported in the early 70’s with modest efficiencies (~5%). Today’s commercial CdTe thin film modules have areas of 2.5 m2 and efficiencies of 17–18%; small area cells are over 22% efficiency. In reaching this performance, the typical/original CdTe/CdS hetero-structure evolved into a CdTe/Cd(Se)Te/MZO (Magnesium Zing Oxide). The technology continues to rely on a post-deposition heat-treatment (in the presence of CdCl2), and the use of Cu (p-type dopant) for the formation of the back contact. Advancing performance to higher levels will depend on the CdTe community’s ability to address key device and material properties (net p-type doping) that limit the cell’s open circuit voltage to 0.9 Volts.