用于降低电磁干扰的宽带隙功率半导体器件封装技术综述

2018 IEEE Symposium on Electromagnetic Compatibility, Signal Integrity and Power Integrity (EMC, SI & PI) Pub Date : 2018-07-01 DOI:10.1109/EMCSI.2018.8495171

Boyi Zhang, Shuo Wang

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引用次数: 16

摘要

宽频带隙(WBG)功率半导体器件由于其优越的特性而越来越受欢迎。然而，它们比Si器件更快的开关速度和更高频率的工作能力带来了新的挑战，其中电磁干扰(EMI)问题是主要问题之一。许多论文报道了WBG器件应用中的电磁干扰问题。然而，封装布局特性的确定尚未与电磁兼容(EMC)分析相联系。本文研究了作为电磁干扰噪声源的WBG功率器件的特性，综述了降低电磁干扰的封装设计注意事项。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An Overview of Wide Bandgap Power Semiconductor Device Packaging Techniques for EMI Reduction

Wide band gap (WBG) power semiconductor devices have been increasingly desirable due to their superior characteristics compared to their Si counterparts. However, their faster switching speed and abilities to operate at higher frequency than Si devices have brought new challenges, among which Electromagnetic interference (EMI) issue is one of the major concerns. EMI issues in WBG device applications had been reported in many papers. However, package layout determined characteristics has not yet been connected to electromagnetic compliance (EMC) analysis. In this paper, characteristics of WBG power devices as EMI noise sources are investigated, package design considerations that could reduce EMI are reviewed.

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2018 IEEE Symposium on Electromagnetic Compatibility, Signal Integrity and Power Integrity (EMC, SI & PI)

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