基于忆阻器非线性的PUF

Callum Aitchison, Basel Halak, Alexander Serb, T. Prodromakis
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引用次数: 0

摘要

随着自主设备越来越多地用于安全和安全关键应用,它们所组成的系统的安全性越来越受到关注。在这种情况下,能够安全地识别和信任设备是很重要的。当IC或设备处于供应链或现场时,缺乏对可以获得物理访问权限的参与者的控制可能会损害系统的信任和整体安全性。伪造的芯片可能会被整合到设备中,从而影响可靠性或安全性。此外,对于已实现的设备,存储在设备上的密钥可能会被恶意行为者复制。为了提高此类器件的安全性,本文提出了一种新的物理不可克隆函数(PUF)架构,该架构基于基于TiOx忆阻器的电阻存储器(RRAM),利用某些忆阻器技术固有的模拟非线性电阻。通过直接利用忆阻器单元的非线性,而不是依赖于器件在单个测试电压下的绝对电阻,可以创建每次比较多比特的PUF。由于该结构直接利用了细胞的非线性,因此加入了一个难以克隆的熵的额外来源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A PUF Based on the Non-Linearity of Memristors
As autonomous devices are increasingly used in security and safety-critical applications the security of the systems they comprise is of increasing concern. In such situations it is important that devices can be securely identified and trusted. When an IC or device is in the supply chain, or in the field, the lack of control over actors who can obtain physical access can compromise the trust and overall security of a system. Counterfeit chips may be incorporated into the device, compromising reliability or security. Additionally, for implemented devices, keys stored on-device may be copied by a bad actor. To help improve the security of such devices this paper proposes a new physical unclonable function (PUF) architecture, based on a TiOx memristor-based resistive memory (RRAM), that exploits the inherent analogue non-linearity in resistance of some memristor technologies. By directly exploiting non-linearity of memristor cells, rather than relying on the devices' absolute resistance at a single test voltage, a multi-bit-per-comparison PUF is created. As the architecture directly exploits cells' non-linearity, an additional source of hard-to-clone entropy is incorporated.
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