低温铜对铜直接键合低于150°C与Au钝化层

Demin Liu, Po-Chih Chen, Yi-Chieh Tsai, Kuan-Neng Chen
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引用次数: 4

摘要

本研究提出了一种新的Cu-Cu直接键合钝化材料。TEM结果表明,在热压键合(TCB)过程中,Cu可以通过Au钝化层扩散到键合界面。此外,与传统的Cu-Cu键合相比,Au钝化层可以降低键合温度(150°C),提高电性能。可靠性试验后的电学测量结果表明,Au钝化法是降低Cu-Cu直接键合温度的可靠方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low Temperature Cu to Cu Direct Bonding below 150 °C with Au Passivation Layer
In this research, Au is proposed as a new passivation material for Cu-Cu direct bonding. According to the TEM result, Cu could diffuse through the Au passivation layer to the bonding interface during the thermocompression bonding (TCB) process. In addition, the Au passivation layer can lower the bonding temperature (150 °C) and improve electrical properties, comparing to the conventional Cu-Cu bonding. Furthermore, the electrical measurement results after reliability tests show that the Au passivation method is a reliable way to reduce the bonding temperature of Cu-Cu direct bonding.
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