数字电路中深亚微米CMOS器件技术的静态降功耗策略分析

G. Munirathnam, Y. M. Babu
{"title":"数字电路中深亚微米CMOS器件技术的静态降功耗策略分析","authors":"G. Munirathnam, Y. M. Babu","doi":"10.1109/ISPCC53510.2021.9609444","DOIUrl":null,"url":null,"abstract":"Low power VLSI circuit design faces the challenging issues of static power dissipation as transistor count doubles for every couple of years. static power dissipation also known as leakage power dissipation which increases in scaled down threshold voltage circuits. Downsizing of CMOS innovation improved the speed and simultaneously leakage currents are left over as struggle. This unconstrained leakage current ought to be decreased for untroubled working of the circuit. This paper proposed novel static power reduction strategy with the literature survey. The research study mainly concentrated on circuit performance parameters like speed, power and power delay product of the specific circuit. This work presents logic gates designed and evaluated by mentor graphics tools with 22 nm CMOS Technology.","PeriodicalId":113266,"journal":{"name":"2021 6th International Conference on Signal Processing, Computing and Control (ISPCC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis of Static Power Reduction Strategies in Deep Submicron CMOS Device Technology for Digital Circuits\",\"authors\":\"G. Munirathnam, Y. M. Babu\",\"doi\":\"10.1109/ISPCC53510.2021.9609444\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low power VLSI circuit design faces the challenging issues of static power dissipation as transistor count doubles for every couple of years. static power dissipation also known as leakage power dissipation which increases in scaled down threshold voltage circuits. Downsizing of CMOS innovation improved the speed and simultaneously leakage currents are left over as struggle. This unconstrained leakage current ought to be decreased for untroubled working of the circuit. This paper proposed novel static power reduction strategy with the literature survey. The research study mainly concentrated on circuit performance parameters like speed, power and power delay product of the specific circuit. This work presents logic gates designed and evaluated by mentor graphics tools with 22 nm CMOS Technology.\",\"PeriodicalId\":113266,\"journal\":{\"name\":\"2021 6th International Conference on Signal Processing, Computing and Control (ISPCC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 6th International Conference on Signal Processing, Computing and Control (ISPCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPCC53510.2021.9609444\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 6th International Conference on Signal Processing, Computing and Control (ISPCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPCC53510.2021.9609444","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

随着晶体管数量每隔几年翻一番,低功耗VLSI电路设计面临着静态功耗的挑战。静态功耗也称为泄漏功耗,它在按比例降低阈值电压电路中增加。CMOS的小型化革新提高了速度,同时漏电流作为斗争遗留下来。为了使电路正常工作,应该减小这种无约束的泄漏电流。在文献综述的基础上,提出了一种新的静功率降低策略。研究主要集中在具体电路的速度、功率、功率延迟积等电路性能参数上。这项工作提出了逻辑门设计和评估的导师图形工具与22纳米CMOS技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of Static Power Reduction Strategies in Deep Submicron CMOS Device Technology for Digital Circuits
Low power VLSI circuit design faces the challenging issues of static power dissipation as transistor count doubles for every couple of years. static power dissipation also known as leakage power dissipation which increases in scaled down threshold voltage circuits. Downsizing of CMOS innovation improved the speed and simultaneously leakage currents are left over as struggle. This unconstrained leakage current ought to be decreased for untroubled working of the circuit. This paper proposed novel static power reduction strategy with the literature survey. The research study mainly concentrated on circuit performance parameters like speed, power and power delay product of the specific circuit. This work presents logic gates designed and evaluated by mentor graphics tools with 22 nm CMOS Technology.
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