横向4H-SiC紫外光电二极管的实验结果

L. D. Benedetto, G. Licciardo, A. Rubino
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引用次数: 8

摘要

本文报道了横向4H-SiC紫外p-i-n光电二极管的实验结果,其p型阳极区和n型阴极区分别由铝和氮离子注入制成。在−10V时,暗电流为−31.5pA,在−1.24nA时增大,器件表面光功率为7.5nW。在320nm时,响应度峰值为0.074A/W,−10V时为0.169AAV,对应的外量子效率分别为30%和69%。对于其他提出的光电二极管,我们的器件完全兼容标准的4H-SiC器件工艺制造,并且可以很容易地集成到电子电路中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental results on lateral 4H-SiC UV photodiodes
In this paper we report the experimental results of lateral 4H-SiC UV p-i-n photodiodes, whose p-type anode and n-type cathode regions are made by Aluminum and Nitrogen, respectively, ion-implantation. The dark reverse current is −31.5pA at −10V and increases at −1.24nA under 320nm UV radiation with an optical power at the surface of the device equal to 7.5nW. The peak of the responsivity is 0.074A/W at 0V and 0.169AAV at −10V for 320nm, corresponding to an external quantum efficiency of, respectively, 30% and 69%. Respect to other proposed photodiodes, our devices are fully compatible with standard 4H-SiC device process fabrication and they can be easily integrated in an electronic circuit.
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